Innodisk M4UE-2GNV1C0M-F View full datasheet Close datasheet
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DIMM (Dual In-line Memory Module), DDR4, 2 GB, 256Mx16, 3200 MT/s, 1.2V
|
| System |
Memory |
Capacity |
2 GB |
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|
CL |
22 |
|
|
IC architecture |
256Mx16 |
|
|
IC Brand |
Nanya |
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|
DIMM data transfer rate |
3200 MT/s |
|
|
The version |
F |
Innodisk M4UE-2GNV1CUN-F View full datasheet Close datasheet
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DIMM (Dual In-line Memory Module), DDR4, 2 GB, 256Mx16, 2933 MT/s, 1.2V
|
| System |
Memory |
Capacity |
2 GB |
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|
CL |
21 |
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|
IC architecture |
256Mx16 |
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|
IC Brand |
Nanya |
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|
DIMM data transfer rate |
2933 MT/s |
|
|
The version |
F |
Innodisk M4UE-2GSV1C0M-G View full datasheet Close datasheet
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DIMM (Dual In-line Memory Module), DDR4, 2 GB, 256Mx16, 3200 MT/s, 1.2V
|
| System |
Memory |
Capacity |
2 GB |
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|
CL |
22 |
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IC architecture |
256Mx16 |
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IC Brand |
Samsung |
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|
DIMM data transfer rate |
3200 MT/s |
|
|
The version |
G |
Innodisk M4UE-2GSV1CIK-G View full datasheet Close datasheet
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DIMM (Dual In-line Memory Module), DDR4, 2 GB, 256Mx16, 2666 MT/s, 1.2V
|
| System |
Memory |
Capacity |
2 GB |
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|
CL |
19 |
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|
IC architecture |
256Mx16 |
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IC Brand |
Samsung |
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DIMM data transfer rate |
2666 MT/s |
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|
The version |
G |
Innodisk M4UE-2GSV1CSJ-G View full datasheet Close datasheet
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DIMM (Dual In-line Memory Module), DDR4, 2 GB, 256Mx16, 2400 MT/s, 1.2V
|
| System |
Memory |
Capacity |
2 GB |
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|
CL |
17 |
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|
IC architecture |
256Mx16 |
|
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IC Brand |
Samsung |
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|
DIMM data transfer rate |
2400 MT/s |
|
|
The version |
G |
Innodisk M4UE-2GSV1CUN-G View full datasheet Close datasheet
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DIMM (Dual In-line Memory Module), DDR4, 2 GB, 256Mx16, 2933 MT/s, 1.2V
|
| System |
Memory |
Capacity |
2 GB |
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|
CL |
21 |
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|
IC architecture |
256Mx16 |
|
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IC Brand |
Samsung |
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|
DIMM data transfer rate |
2933 MT/s |
|
|
The version |
G |
Innodisk M4UE-4GNSJC0M-F View full datasheet Close datasheet
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DIMM (Dual In-line Memory Module), DDR4, 4 GB, 512Mx8, 3200 MT/s, 1.2V
|
| System |
Memory |
Capacity |
4 GB |
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|
CL |
22 |
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|
IC architecture |
512Mx8 |
|
|
IC Brand |
Nanya |
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|
DIMM data transfer rate |
3200 MT/s |
|
|
The version |
F |
Innodisk M4UE-4GNSJCUN-F View full datasheet Close datasheet
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DIMM (Dual In-line Memory Module), DDR4, 4 GB, 512Mx8, 2933 MT/s, 1.2V
|
| System |
Memory |
Capacity |
4 GB |
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|
CL |
21 |
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IC architecture |
512Mx8 |
|
|
IC Brand |
Nanya |
|
|
DIMM data transfer rate |
2933 MT/s |
|
|
The version |
F |
Innodisk M4UE-4GNV2C0M-F View full datasheet Close datasheet
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DIMM (Dual In-line Memory Module), DDR4, 4 GB, 256Mx16, 3200 MT/s, 1.2V
|
| System |
Memory |
Capacity |
4 GB |
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|
CL |
22 |
|
|
IC architecture |
256Mx16 |
|
|
IC Brand |
Nanya |
|
|
DIMM data transfer rate |
3200 MT/s |
|
|
The version |
F |
Innodisk M4UE-4GNV2CUN-F View full datasheet Close datasheet
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DIMM (Dual In-line Memory Module), DDR4, 4 GB, 256Mx16, 2933 MT/s, 1.2V
|
| System |
Memory |
Capacity |
4 GB |
|
|
CL |
21 |
|
|
IC architecture |
256Mx16 |
|
|
IC Brand |
Nanya |
|
|
DIMM data transfer rate |
2933 MT/s |
|
|
The version |
F |
Innodisk M4UE-4GNX1C0M-H View full datasheet Close datasheet
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DIMM (Dual In-line Memory Module), DDR4, 4 GB, 512Mx16, 3200 MT/s, 1.2V
|
| System |
Memory |
Capacity |
4 GB |
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|
CL |
22 |
|
|
IC architecture |
512Mx16 |
|
|
IC Brand |
Nanya |
|
|
DIMM data transfer rate |
3200 MT/s |
|
|
The version |
H |
Innodisk M4UE-4GNX1CUN-H View full datasheet Close datasheet
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DIMM (Dual In-line Memory Module), DDR4, 4 GB, 512Mx16, 2933 MT/s, 1.2V
|
| System |
Memory |
Capacity |
4 GB |
|
|
CL |
21 |
|
|
IC architecture |
512Mx16 |
|
|
IC Brand |
Nanya |
|
|
DIMM data transfer rate |
2933 MT/s |
|
|
The version |
H |
Innodisk M4UE-4GSSJC0M-G View full datasheet Close datasheet
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DIMM (Dual In-line Memory Module), DDR4, 4 GB, 512Mx8, 3200 MT/s, 1.2V
|
| System |
Memory |
Capacity |
4 GB |
|
|
CL |
22 |
|
|
IC architecture |
512Mx8 |
|
|
IC Brand |
Samsung |
|
|
DIMM data transfer rate |
3200 MT/s |
|
|
The version |
G |
Innodisk M4UE-4GSSJCIK-G View full datasheet Close datasheet
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DIMM (Dual In-line Memory Module), DDR4, 4 GB, 512Mx8, 2666 MT/s, 1.2V
|
| System |
Memory |
Capacity |
4 GB |
|
|
CL |
19 |
|
|
IC architecture |
512Mx8 |
|
|
IC Brand |
Samsung |
|
|
DIMM data transfer rate |
2666 MT/s |
|
|
The version |
G |
Innodisk M4UE-4GSSJCSJ-G View full datasheet Close datasheet
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DIMM (Dual In-line Memory Module), DDR4, 4 GB, 512Mx8, 2400 MT/s, 1.2V
|
| System |
Memory |
Capacity |
4 GB |
|
|
CL |
17 |
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IC architecture |
512Mx8 |
|
|
IC Brand |
Samsung |
|
|
DIMM data transfer rate |
2400 MT/s |
|
|
The version |
G |
Innodisk M4UE-4GSSJCUN-G View full datasheet Close datasheet
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DIMM (Dual In-line Memory Module), DDR4, 4 GB, 512Mx8, 2933 MT/s, 1.2V
|
| System |
Memory |
Capacity |
4 GB |
|
|
CL |
21 |
|
|
IC architecture |
512Mx8 |
|
|
IC Brand |
Samsung |
|
|
DIMM data transfer rate |
2933 MT/s |
|
|
The version |
G |
Innodisk M4UE-4GSV2C0M-G View full datasheet Close datasheet
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DIMM (Dual In-line Memory Module), DDR4, 4 GB, 256Mx16, 3200 MT/s, 1.2V
|
| System |
Memory |
Capacity |
4 GB |
|
|
CL |
22 |
|
|
IC architecture |
256Mx16 |
|
|
IC Brand |
Samsung |
|
|
DIMM data transfer rate |
3200 MT/s |
|
|
The version |
G |
Innodisk M4UE-4GSV2CIK-G View full datasheet Close datasheet
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DIMM (Dual In-line Memory Module), DDR4, 4 GB, 256Mx16, 2666 MT/s, 1.2V
|
| System |
Memory |
Capacity |
4 GB |
|
|
CL |
19 |
|
|
IC architecture |
256Mx16 |
|
|
IC Brand |
Samsung |
|
|
DIMM data transfer rate |
2666 MT/s |
|
|
The version |
G |
Innodisk M4UE-4GSV2CRG-G View full datasheet Close datasheet
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DIMM (Dual In-line Memory Module), DDR4, 4 GB, 256Mx16, 2133 MT/s, 1.2V
|
| System |
Memory |
Capacity |
4 GB |
|
|
CL |
15 |
|
|
IC architecture |
256Mx16 |
|
|
IC Brand |
Samsung |
|
|
DIMM data transfer rate |
2133 MT/s |
|
|
The version |
G |
Innodisk M4UE-4GSV2CSJ-G View full datasheet Close datasheet
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DIMM (Dual In-line Memory Module), DDR4, 4 GB, 256Mx16, 2400 MT/s, 1.2V
|
| System |
Memory |
Capacity |
4 GB |
|
|
CL |
17 |
|
|
IC architecture |
256Mx16 |
|
|
IC Brand |
Samsung |
|
|
DIMM data transfer rate |
2400 MT/s |
|
|
The version |
G |
Innodisk M4UE-4GSV2CUN-G View full datasheet Close datasheet
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DIMM (Dual In-line Memory Module), DDR4, 4 GB, 256Mx16, 2933 MT/s, 1.2V
|
| System |
Memory |
Capacity |
4 GB |
|
|
CL |
21 |
|
|
IC architecture |
256Mx16 |
|
|
IC Brand |
Samsung |
|
|
DIMM data transfer rate |
2933 MT/s |
|
|
The version |
G |
Innodisk M4UE-8GN1JC0M-H View full datasheet Close datasheet
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DIMM (Dual In-line Memory Module), DDR4, 8 GB, 1Gx8, 3200 MT/s, 1.2V
|
| System |
Memory |
Capacity |
8 GB |
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|
CL |
22 |
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IC architecture |
1Gx8 |
|
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IC Brand |
Nanya |
|
|
DIMM data transfer rate |
3200 MT/s |
|
|
The version |
H |
Innodisk M4UE-8GN1JCUN-H View full datasheet Close datasheet
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DIMM (Dual In-line Memory Module), DDR4, 8 GB, 1Gx8, 2933 MT/s, 1.2V
|
| System |
Memory |
Capacity |
8 GB |
|
|
CL |
21 |
|
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IC architecture |
1Gx8 |
|
|
IC Brand |
Nanya |
|
|
DIMM data transfer rate |
2933 MT/s |
|
|
The version |
H |
Innodisk M4UE-8GNSKC0M-F View full datasheet Close datasheet
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DIMM (Dual In-line Memory Module), DDR4, 8 GB, 512Mx8, 3200 MT/s, 1.2V
|
| System |
Memory |
Capacity |
8 GB |
|
|
CL |
22 |
|
|
IC architecture |
512Mx8 |
|
|
IC Brand |
Nanya |
|
|
DIMM data transfer rate |
3200 MT/s |
|
|
The version |
F |
Innodisk M4UE-8GNSKCUN-F View full datasheet Close datasheet
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DIMM (Dual In-line Memory Module), DDR4, 8 GB, 512Mx8, 2933 MT/s, 1.2V
|
| System |
Memory |
Capacity |
8 GB |
|
|
CL |
21 |
|
|
IC architecture |
512Mx8 |
|
|
IC Brand |
Nanya |
|
|
DIMM data transfer rate |
2933 MT/s |
|
|
The version |
F |
Innodisk M4UE-8GNX2C0M-H View full datasheet Close datasheet
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DIMM (Dual In-line Memory Module), DDR4, 8 GB, 512Mx16, 3200 MT/s, 1.2V
|
| System |
Memory |
Capacity |
8 GB |
|
|
CL |
22 |
|
|
IC architecture |
512Mx16 |
|
|
IC Brand |
Nanya |
|
|
DIMM data transfer rate |
3200 MT/s |
|
|
The version |
H |
Innodisk M4UE-8GNX2CUN-H View full datasheet Close datasheet
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DIMM (Dual In-line Memory Module), DDR4, 8 GB, 512Mx16, 2933 MT/s, 1.2V
|
| System |
Memory |
Capacity |
8 GB |
|
|
CL |
21 |
|
|
IC architecture |
512Mx16 |
|
|
IC Brand |
Nanya |
|
|
DIMM data transfer rate |
2933 MT/s |
|
|
The version |
H |
Innodisk M4UE-8GSSKC0M-G View full datasheet Close datasheet
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DIMM (Dual In-line Memory Module), DDR4, 8 GB, 512Mx8, 3200 MT/s, 1.2V
|
| System |
Memory |
Capacity |
8 GB |
|
|
CL |
22 |
|
|
IC architecture |
512Mx8 |
|
|
IC Brand |
Samsung |
|
|
DIMM data transfer rate |
3200 MT/s |
|
|
The version |
G |
Innodisk M4UE-8GSSKCIK-G View full datasheet Close datasheet
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DIMM (Dual In-line Memory Module), DDR4, 8 GB, 512Mx8, 2666 MT/s, 1.2V
|
| System |
Memory |
Capacity |
8 GB |
|
|
CL |
19 |
|
|
IC architecture |
512Mx8 |
|
|
IC Brand |
Samsung |
|
|
DIMM data transfer rate |
2666 MT/s |
|
|
The version |
G |
Innodisk M4UE-8GSSKCSJ-G View full datasheet Close datasheet
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DIMM (Dual In-line Memory Module), DDR4, 8 GB, 512Mx8, 2400 MT/s, 1.2V
|
| System |
Memory |
Capacity |
8 GB |
|
|
CL |
17 |
|
|
IC architecture |
512Mx8 |
|
|
IC Brand |
Samsung |
|
|
DIMM data transfer rate |
2400 MT/s |
|
|
The version |
G |
Innodisk M4UE-8GSSKCUN-G View full datasheet Close datasheet
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DIMM (Dual In-line Memory Module), DDR4, 8 GB, 512Mx8, 2933 MT/s, 1.2V
|
| System |
Memory |
Capacity |
8 GB |
|
|
CL |
21 |
|
|
IC architecture |
512Mx8 |
|
|
IC Brand |
Samsung |
|
|
DIMM data transfer rate |
2933 MT/s |
|
|
The version |
G |
Innodisk M4UE-AGH2JC0M-D View full datasheet Close datasheet
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DIMM (Dual In-line Memory Module), DDR4, 16 GB, 2Gx8, 3200 MT/s, 1.2V
|
| System |
Memory |
Capacity |
16 GB |
|
|
CL |
22 |
|
|
IC architecture |
2Gx8 |
|
|
IC Brand |
Hynix |
|
|
DIMM data transfer rate |
3200 MT/s |
|
|
The version |
D |
Innodisk M4UE-AGH2JCUN-D View full datasheet Close datasheet
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DIMM (Dual In-line Memory Module), DDR4, 16 GB, 2Gx8, 2933 MT/s, 1.2V
|
| System |
Memory |
Capacity |
16 GB |
|
|
CL |
21 |
|
|
IC architecture |
2Gx8 |
|
|
IC Brand |
Hynix |
|
|
DIMM data transfer rate |
2933 MT/s |
|
|
The version |
D |
Innodisk M4UE-AGN1KC0M-H View full datasheet Close datasheet
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DIMM (Dual In-line Memory Module), DDR4, 16 GB, 1Gx8, 3200 MT/s, 1.2V
|
| System |
Memory |
Capacity |
16 GB |
|
|
CL |
22 |
|
|
IC architecture |
1Gx8 |
|
|
IC Brand |
Nanya |
|
|
DIMM data transfer rate |
3200 MT/s |
|
|
The version |
H |
Innodisk M4UE-AGN1KCUN-H View full datasheet Close datasheet
|
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DIMM (Dual In-line Memory Module), DDR4, 16 GB, 1Gx8, 2933 MT/s, 1.2V
|
| System |
Memory |
Capacity |
16 GB |
|
|
CL |
21 |
|
|
IC architecture |
1Gx8 |
|
|
IC Brand |
Nanya |
|
|
DIMM data transfer rate |
2933 MT/s |
|
|
The version |
H |
Innodisk M4UE-AGS2JC0M-C View full datasheet Close datasheet
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DIMM (Dual In-line Memory Module), DDR4, 16 GB, 2Gx8, 3200 MT/s, 1.2V
|
| System |
Memory |
Capacity |
16 GB |
|
|
CL |
22 |
|
|
IC architecture |
2Gx8 |
|
|
IC Brand |
Samsung |
|
|
DIMM data transfer rate |
3200 MT/s |
|
|
The version |
C |
Innodisk M4UE-AGS2JCUN-C View full datasheet Close datasheet
|
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DIMM (Dual In-line Memory Module), DDR4, 16 GB, 2Gx8, 2933 MT/s, 1.2V
|
| System |
Memory |
Capacity |
16 GB |
|
|
CL |
21 |
|
|
IC architecture |
2Gx8 |
|
|
IC Brand |
Samsung |
|
|
DIMM data transfer rate |
2933 MT/s |
|
|
The version |
C |
Innodisk M4UE-BGH2KC0M-D View full datasheet Close datasheet
|
|
DIMM (Dual In-line Memory Module), DDR4, 32 GB, 2Gx8, 3200 MT/s, 1.2V
|
| System |
Memory |
Capacity |
32 GB |
|
|
CL |
22 |
|
|
IC architecture |
2Gx8 |
|
|
IC Brand |
Hynix |
|
|
DIMM data transfer rate |
3200 MT/s |
|
|
The version |
D |
Innodisk M4UE-BGH2KCUN-D View full datasheet Close datasheet
|
|
DIMM (Dual In-line Memory Module), DDR4, 32 GB, 2Gx8, 2933 MT/s, 1.2V
|
| System |
Memory |
Capacity |
32 GB |
|
|
CL |
21 |
|
|
IC architecture |
2Gx8 |
|
|
IC Brand |
Hynix |
|
|
DIMM data transfer rate |
2933 MT/s |
|
|
The version |
D |
Innodisk M4UE-BGS2KC0M-C View full datasheet Close datasheet
|
|
DIMM (Dual In-line Memory Module), DDR4, 32 GB, 2Gx8, 3200 MT/s, 1.2V
|
| System |
Memory |
Capacity |
32 GB |
|
|
CL |
22 |
|
|
IC architecture |
2Gx8 |
|
|
IC Brand |
Samsung |
|
|
DIMM data transfer rate |
3200 MT/s |
|
|
The version |
C |
Innodisk M4UE-BGS2KCIK-C View full datasheet Close datasheet
|
|
DIMM (Dual In-line Memory Module), DDR4, 32 GB, 2Gx8, 2666 MT/s, 1.2V
|
| System |
Memory |
Capacity |
32 GB |
|
|
CL |
19 |
|
|
IC architecture |
2Gx8 |
|
|
IC Brand |
Samsung |
|
|
DIMM data transfer rate |
2666 MT/s |
|
|
The version |
C |
Innodisk M4UE-BGS2KCSJ-C View full datasheet Close datasheet
|
|
DIMM (Dual In-line Memory Module), DDR4, 32 GB, 2Gx8, 2400 MT/s, 1.2V
|
| System |
Memory |
Capacity |
32 GB |
|
|
CL |
17 |
|
|
IC architecture |
2Gx8 |
|
|
IC Brand |
Samsung |
|
|
DIMM data transfer rate |
2400 MT/s |
|
|
The version |
C |
Innodisk M4UE-BGS2KCUN-C View full datasheet Close datasheet
|
|
DIMM (Dual In-line Memory Module), DDR4, 32 GB, 2Gx8, 2933 MT/s, 1.2V
|
| System |
Memory |
Capacity |
32 GB |
|
|
CL |
21 |
|
|
IC architecture |
2Gx8 |
|
|
IC Brand |
Samsung |
|
|
DIMM data transfer rate |
2933 MT/s |
|
|
The version |
C |